參數(shù)資料
型號： AUIRF3415
元件分類： JFETs
英文描述： 43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 4/11頁
文件大?。?/td> 236K
代理商： AUIRF3415
AUIRF3415
2
www.irf.com
S
D
G
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 2.4mH
RG = 25, IAS = 22A. (See Figure 12)
ISD ≤ 22A, di/dt ≤ 820A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300s; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.17
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.042
VGS(th)
Gate Threshold Voltage2.0
–––
4.0
V
gfs
Forward Transconductance
19
–––
S
IDSS
Drain-to-Source Leakage Current
–––
25
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
200
Qgs
Gate-to-Source Charge
–––
17
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
98
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––
55
–––
td(off)
Turn-Off Delay Time
–––
71
–––
ns
tf
Fall Time
–––
69
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2400
–––
Coss
Output Capacitance
–––
640
–––
pF
Crss
Reverse Transfer Capacitance
–––
340
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
43
(Body Diode)
A
ISM
Pulsed Source Current
–––
150
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
260
390
ns
Qrr
Reverse Recovery Charge
–––
2.2
3.3
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VDS = 50V, ID = 22A
ID = 22A
VDS = 120V
VGS = 20V
VGS = -20V
VGS = 10V, See Fig. 6 & 13 f
ID = 22A
RG = 2.5
TJ = 25°C, IS = 22A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
Conditions
RD = 3.3
, See Fig. 10
VGS = 0V
di/dt = 100A/s
f
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 22A f
VDS = VGS, ID = 250A
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
MOSFET symbol
VDD = 75V
VDS = 25V
= 1.0MHz, See Fig. 5
TJ = 25°C, IF = 22A
相關PDF資料
PDF描述
AUIRF3504 87 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF3710Z 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF3710ZS 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3710ZSTRR 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3710ZSTRL 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
AUIRF3415 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 150V 43A TO-2
AUIRF3504 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF3504 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 87A TO-22 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 40V, 87A, TO-220AB
AUIRF3710Z 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 108mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF3710ZS 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*