參數(shù)資料
型號(hào)： AUIRF3710ZSTRR
元件分類： JFETs
英文描述： 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, D2PAK-3
文件頁數(shù)： 7/14頁
文件大?。?/td> 353K
代理商： AUIRF3710ZSTRR
AUIRF3710Z/S
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.27mH,
RG = 25Ω, IAS = 35A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 35A, di/dt ≤ 380A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
This value determined from sample failure population,
starting TJ = 25°C, L = 0.27mH,RG = 25Ω, IAS = 35A, VGS =10V
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220AB pakcage.
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.10
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
14
18
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
35
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Qg
Total Gate Charge
–––
82
120
nC
Qgs
Gate-to-Source Charge
–––
19
28
Qgd
Gate-to-Drain ("Miller") Charge
–––
27
40
td(on)
Turn-On Delay Time
–––
17
–––
ns
tr
Rise Time
–––
77
–––
td(off)
Turn-Off Delay Time
–––
41
–––
tf
Fall Time
–––
56
–––
LD
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2900
–––
pF
Coss
Output Capacitance
–––
290
–––
Crss
Reverse Transfer Capacitance
–––
150
–––
Coss
Output Capacitance
–––
1130
–––
Coss
Output Capacitance
–––
170
–––
Coss eff.
Effective Output Capacitance
–––
280
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
59
(Body Diode)
A
ISM
Pulsed Source Current
–––
240
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
5075ns
Qrr
Reverse Recovery Charge
–––
100
160
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 35A f
VDS = VGS, ID = 250μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
RG = 6.8Ω
ID = 35A
VDS = 50V, ID = 35A
VDD = 50V
ID = 35A
VGS = 20V
VGS = -20V
TJ = 25°C, IF = 35A, VDD = 25V
di/dt = 100A/μs
f
TJ = 25°C, IS = 35A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 80V, = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 80V
VDS = 80V
VGS = 10V
f
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 10V
f
相關(guān)PDF資料
PDF描述
AUIRF3710ZSTRL 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3805S-7P 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3805S-7PTRR 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3805S-7PTRL 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3805L-7P 160 A, 55 V, N-CHANNEL, Si, POWER, MOSFET
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