參數(shù)資料
型號(hào)： AUIRF540ZSTRR
元件分類(lèi)： JFETs
英文描述： 36 A, 100 V, 0.0265 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁(yè)數(shù)： 1/14頁(yè)
文件大?。?/td> 326K
代理商： AUIRF540ZSTRR
07/20/10
www.irf.com
1
PD - 96326
HEXFET Power MOSFET
AUIRF540Z
AUIRF540ZS
D2Pak
AUIRF540ZS
TO-220AB
AUIRF540Z
AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliabledeviceforuseinAutomotiveapplicationsandawide
variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
S
D
G
GD
S
Gate
Drain
Source
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
100V
RDS(on) typ.
21m
max. 26.5m
ID
36A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
d
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.64
RθCS
Case-to-Sink, Flat Greased Surface
i
0.50
–––
RθJA
Junction-to-Ambient
i
–––
62
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
-55 to + 175
300(1.6mm from case)
10 lbf
yin (1.1Nym)
92
0.61
± 20
Max.
36
25
140
120
83
See Fig.12a, 12b, 15, 16
mJ
°C
A
°C/W
相關(guān)PDF資料
PDF描述
AUIRF540Z 36 A, 100 V, 0.0265 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF540ZS 36 A, 100 V, 0.0265 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF6215 13 A, 150 V, 0.29 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF7103Q 3 A, 50 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
AUIRF7103QTR 3 A, 50 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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