參數(shù)資料
型號： AUIRF7304QTR
元件分類： JFETs
英文描述： 4.3 A, 20 V, 0.09 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 4/11頁
文件大小： 212K
代理商： AUIRF7304QTR
AUIRF7304Q
www.irf.com
2
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -2.2A, di/dt ≤ 50A/s, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.012 ––– V/°C
–––
––– 0.090
–––
––– 0.140
VGS(th)
Gate Threshold Voltage
-0.70
–––
-1.5
V
gfs
Forward Transconductance
4.0
–––
S
IDSS
Drain-to-Source Leakage Current
–––
-1.0
–––
-25
IGSS
Gate-to-Source Forward Leakage
–––
-100
Gate-to-Source Reverse Leakage
–––
100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
22
Qgs
Gate-to-Source Charge
–––
3.3
Qgd
Gate-to-Drain ("Miller") Charge
–––
9.0
td(on)
Turn-On Delay Time
–––
8.4
–––
tr
Rise Time
–––
26
–––
td(off)
Turn-Off Delay Time
–––
51
–––
tf
Fall Time
–––
33
–––
LD
Internal Drain Inductance
–––
4.0
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
6.0
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
610
–––
Coss
Output Capacitance
–––
310
–––
Crss
Reverse Transfer Capacitance
–––
170
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
-1.0
V
trr
Reverse Recovery Time
–––
56
84
ns
TJ = 25°C,IF = -2.2A
Qrr
Reverse Recovery Charge
–––
71
110
nC di/dt = 100A/μs e
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
-17
–––
-2.5
ID = -2.2A
RG = 6.0Ω
RD = 4.5Ω, See Fig. 10 e
VGS = 0V
VDS = -15V
= 1.0MHz, See Fig. 5
nA
μA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -4.5V, See Fig. 6 & 12e
VGS = 12V
VDS = -16V
VDD = -10V
A
pF
ns
nC
TJ = 25°C, IS = -1.8A, VGS = 0V e
integral reverse
p-n junction diode.
Conditions
MOSFET symbol
showing the
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -2.2A e
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS = -2.7V, ID = -1.8A e
VDS = VGS, ID = -250μA
Conditions
VDS = -16V, ID = -2.2A
ID = -2.2A
VGS = -12V
Starting TJ = 25°C, RG = 25Ω, IAS = -2.2A.
When mounted on 1 inch square copper board, t<10 sec.
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