參數(shù)資料
型號(hào)： AUIRFP2907
元件分類： JFETs
英文描述： 90 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 5/12頁
文件大?。?/td> 220K
代理商： AUIRFP2907
AUIRFP2907
2
www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.25mH
RG = 25
Ω, IAS = 125A. (See Figure 12).
ISD ≤ 125A, di/dt ≤ 260A/μs, VDD ≤ V(BR)DSS,
TJ
≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
S
D
G
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Rθ is measured at TJ of approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.085
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.6
4.5
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
130
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
410
620
Qgs
Gate-to-Source Charge
–––
92
140
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
140
210
td(on)
Turn-On Delay Time
–––
23
–––
tr
Rise Time
–––
190
–––
td(off)
Turn-Off Delay Time
–––
130
–––
ns
tf
Fall Time
–––
130
–––
LD
Internal Drain Inductance
–––
5.0
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
13
–––
from package
and center of die contact
Ciss
Input Capacitance
––– 13000 –––
Coss
Output Capacitance
–––
2100
–––
pF
Crss
Reverse Transfer Capacitance
–––
500
–––
Coss
Output Capacitance
–––
9780
–––
Coss
Output Capacitance
–––
1360
–––
Coss eff.
Effective Output Capacitance
g
–––
2320
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
209
h
(Body Diode)
A
ISM
Pulsed Source Current
–––
840
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
140
210
ns
Qrr
Reverse Recovery Charge
–––
880
1320
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
TJ = 25°C, IF = 125A
di/dt = 100A/μs
f
TJ = 25°C, IS = 125A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 125A f
MOSFET symbol
VDD = 38V
ID = 125A
RG = 1.2
Ω
Conditions
VGS = 10V f
VGS = 0V
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 60V, = 1.0MHz
VGS = 0V, VDS = 1.0V, = 1.0MHz
VDS = 25V, ID = 125Af
ID = 125A
VDS = 60V
VGS = 20V
VGS = -20V
VGS = 10V f
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
m
Ω
VDS = 25V
Conditions
VDS = VGS, ID = 250μA
相關(guān)PDF資料
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