參數(shù)資料
型號(hào)： AUIRFR120ZTRR
元件分類： JFETs
英文描述： 8.7 A, 100 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁數(shù)： 7/14頁
文件大?。?/td> 309K
代理商： AUIRFR120ZTRR
AUIRFR/U120Z
2
www.irf.com
S
D
G
Notes
through are on page 3
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.084
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
150
190
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
16
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
6.9
10
Qgs
Gate-to-Source Charge
–––
1.6
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
3.1
–––
td(on)
Turn-On Delay Time
–––
8.3
–––
tr
Rise Time
–––26–––
td(off)
Turn-Off Delay Time
–––
27
–––
ns
tf
Fall Time
–––23–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
310
–––
Coss
Output Capacitance
–––
41
–––
Crss
Reverse Transfer Capacitance
–––
24
–––
pF
Coss
Output Capacitance
–––
150
–––
Coss
Output Capacitance
–––
26
–––
Coss eff.
Effective Output Capacitance
–––
57
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
8.7
(Body Diode)
A
ISM
Pulsed Source Current
–––
35
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
24
36
ns
Qrr
Reverse Recovery Charge
–––
23
35
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 80V, = 1.0MHz
VGS = 0V, VDS = 0V to 80V
f
VGS = 10V e
VDD = 50V
ID = 5.2A
RG = 53
TJ = 25°C, IS = 5.2A, VGS = 0V e
TJ = 25°C, IF = 5.2A, VDD = 50V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 5.2A
e
VDS = VGS, ID = 25A
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 5.2A
ID = 5.2A
VDS = 80V
Conditions
VGS = 10V e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
相關(guān)PDF資料
PDF描述
AUIRFR120Z 8.7 A, 100 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR120ZTR 8.7 A, 100 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR2307ZTRR 42 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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