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參數(shù)資料
| 型號(hào)： | AUIRFR2307Z |
| 元件分類： | JFETs |
| 英文描述： | 42 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁(yè)數(shù)： | 12/13頁(yè) |
| 文件大?。?/td> | 298K |
| 代理商： | AUIRFR2307Z |
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AUIRFR2307Z
8
www.irf.com
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) =
DT/ ZthJC
Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
tav
assuming
Tj = 25°C due to
avalanche losses
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
E
A
R
,A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 32A
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| AUIRFR2307ZTRL | 42 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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| AUIRFR2405 | 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR2405TRL | 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR2405TRR | 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| AUIRFR2307ZTR | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR2307ZTRL | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR2307ZTRR | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR2405 | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR2405 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 30A TO-25 |
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