參數(shù)資料
型號(hào): AUIRFR2307ZTRR
元件分類: JFETs
英文描述: 42 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁(yè)數(shù): 13/13頁(yè)
文件大?。?/td> 298K
代理商: AUIRFR2307ZTRR
AUIRFR2307Z
www.irf.com
9
Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
CircuitLayoutConsiderations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
-
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
VDS
Pulse Width ≤ 1 s
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
相關(guān)PDF資料
PDF描述
AUIRFR2307ZTR 42 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR2307Z 42 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR2307ZTRL 42 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR2405TR 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR2405 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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