參數(shù)資料
型號： AUIRL3705N
元件分類： JFETs
英文描述： 89 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 4/11頁
文件大?。?/td> 1024K
代理商： AUIRL3705N
AUIRL3705N
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
VDD = 25V, starting TJ = 25°C, L = 320H, RG = 25, IAS = 46A. (See Figure 12)
ISD ≤ 46A, di/dt ≤ 250A/s, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300s; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature. for
recommended current-handling of the package refer to Design tip # 93-4
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.056
–––
V/°C
–––
0.010
–––
0.012
–––
0.018
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
gfs
Forward Transconductance
50
–––
S
IDSS
Drain-to-Source Leakage Current
–––
25
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
98
Qgs
Gate-to-Source Charge
–––
19
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
49
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––
140
–––
td(off)
Turn-Off Delay Time
–––
37
–––
ns
tf
Fall Time
–––
78
–––
LD
Internal Drain Inductance
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
Ciss
Input Capacitance
–––
3600
–––
Coss
Output Capacitance
–––
870
–––
Crss
Reverse Transfer Capacitance
–––
320
–––
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
94
140
ns
Qrr
Reverse Recovery Charge
–––
290
440
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
RDS(on)
Static Drain-to-Source On-Resistance
VGS = 5.0V, ID = 46A
f
VGS = 4.0V, ID = 39A
f
VDS = 25V, ID = 46A
g
ID = 46A
VDS = 44V
Conditions
RD = 0.59
, See Fig.10
f
VGS = 0V
VDS = 25V
= 1.0MHz, See Fig.5
VGS = 16V
VGS = -16V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 46A, VGS = 0V f
TJ = 25°C, IF = 46A
di/dt = 100A/s
f
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 46A
f
VDS = VGS, ID = 250A
VDS =55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 5.0V,See Fig 6 and 13 f
VDD = 28V
ID = 46A
RG = 1.8
,VGS = 5.0V
–––
4.5
7.5
pF
–––
89
g
310
A
相關PDF資料
PDF描述
AUIRL3705ZS 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRL3705ZL 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRL3705ZSTRR 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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相關代理商/技術參數(shù)
參數(shù)描述
AUIRL3705N 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 89A TO-22
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