參數(shù)資料
型號(hào)： AUIRLR2905TRR
元件分類： JFETs
英文描述： 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 269K
代理商： AUIRLR2905TRR
AUIRLR2905
2
www.irf.com
S
D
G
VDD = 25V, starting TJ = 25°C, L =470H
RG = 25
, IAS = 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300s; duty cycle ≤ 2%.
When mounted on 1" square PCB (FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
Rθ is measured at Tj approximately 90°C.
ISD ≤ 25A, di/dt ≤ 270A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage55
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.070
–––
V/°C
–––
0.027
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.030
–––
0.040
VGS(th)
Gate Threshold Voltage1.0
–––
2.0
V
gfs
Forward Transconductance
21
–––
S
IDSS
Drain-to-Source Leakage Current
–––
25
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
48
Qgs
Gate-to-Source Charge
–––
8.6
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
25
td(on)
Turn-On Delay Time
–––
11
–––
tr
Rise Time
–––
84
–––
td(off)
Turn-Off Delay Time
–––
26
–––
ns
tf
Fall Time
–––
15
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
1700
–––
Coss
Output Capacitance
–––
400
–––
Crss
Reverse Transfer Capacitance
–––
150
–––
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
42
(Body Diode)
A
ISM
Pulsed Source Current
–––
160
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
80
120
ns
Qrr
Reverse Recovery Charge
–––
210
320
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 5.0V, ID = 25A f
VGS = 4.0V, ID = 21A f
VDS = 25V, ID = 25A
ID = 25A
VGS = 16V
VGS = -16V
Conditions
VDS = 44V
Conditions
VGS = 5.0V, RD = 1.1
f
VGS = 0V
VDS = 25V
= 1.0MHz, See Fig. 5
VGS = 5.0V f
VDD = 28V
ID = 25A
RG = 3.4
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V f
TJ = 25°C, IF = 25A
di/dt = 100A/s
f
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A f
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
相關(guān)PDF資料
PDF描述
AUIRLR2905TR 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRLR2905 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRLR2905TRL 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRLR2905ZTR 42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRLR2905ZTRR 42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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