參數(shù)資料
型號： AUIRLR2905ZTRL
元件分類： JFETs
英文描述： 42 A, 55 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁數(shù)： 6/13頁
文件大?。?/td> 273K
代理商： AUIRLR2905ZTRL
AUIRLR2905Z
2
www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.089mH
RG = 25, IAS = 36A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.089mH, RG = 25, IAS = 36A,
VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage55
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.053
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
11
13.5
m
–––
20
m
–––
22.5
m
VGS(th)
Gate Threshold Voltage1.0
–––
3.0
V
gfs
Forward Transconductance
25
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
23
35
Qgs
Gate-to-Source Charge
–––
8.5
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge–––
12
–––
td(on)
Turn-On Delay Time
–––14–––
tr
Rise Time
–––
130
–––
td(off)
Turn-Off Delay Time
–––24–––
ns
tf
Fall Time
–––33–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
1570
–––
Coss
Output Capacitance
–––
230
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
pF
Coss
Output Capacitance
–––
840
–––
Coss
Output Capacitance
–––
180
–––
Coss eff.
Effective Output Capacitance
–––
290
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
42
(Body Diode)
A
ISM
Pulsed Source Current
–––
240
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
2233ns
Qrr
Reverse Recovery Charge
–––
14
21
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 5.0V, ID = 30A e
VGS = 16V
VGS = -16V
VDS = 44V
VGS = 4.5V, ID = 15A e
VDS = 25V, ID = 36A
ID = 36A
Conditions
VGS = 5.0V e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 44V, = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 36A, VGS = 0V e
TJ = 25°C, IF = 36A, VDD = 28V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A e
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 5.0V e
VDD = 28V
ID = 36A
RG = 15
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