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參數(shù)資料
| 型號： | BAS19201 |
| 英文描述： | CY62148E MoBL® 4-Mbit (512K x 8) Static RAM |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | BAS19201 |
SOT23 SILICON HIGH
SPEED SWITCHING DIODE
ISSUE 2 JANUARY 1995
PIN CONFIGURATION
PARTMARKING DETAILS
BAS19 A8
BAS20 A81
BAS21 A82
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BAS19
BAS20
BAS21
UNIT
Continuous Reverse Voltage
V
R
V
RRM
I
F(AV)
I
F
I
FRM
P
tot
T
j
:T
stg
100
150
200
V
Repetative Peak Reverse Voltage
120
200
250
V
Average Forward Rectified Current
200
mA
Forward Current
200
mA
Repetative Peak Forward Current
625
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Reverse
Breakdown
Voltage
V
(BR)
BAS19
120
V
I
R
=100
μ
A (1)
BAS20
200
V
I
R
=100
μ
A (1)
BAS21
250
V
I
R
=100
μ
A (2)
Reverse Current
I
R
100
100
nA
μ
A
V
R
=V
R
max
V
R
=V
R
max, T
J
=150°C
Static Forward Voltage V
F
1.00
1.25
IF=100mA
I
F
=200mA
Differential Resistance
r
diff
5
I
F
=10mA
Diode Capacitance
C
d
5
pF
f=1MHz
Reverse Recovery Time t
rr
50
ns
I
F
=30mA to I
R
=30mA
R
L
=10
measured at I
R
=3mA
(1) Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V
Spice parameter data is available upon request for this device
BAS19
BAS20
BAS21
PAGE NO
1
3
2
SOT23
1
3
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