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參數(shù)資料
| 型號(hào)： | BAS83 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diodes |
| 中文描述： | 0.03 A, 60 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | BAS83 |
1998 Jun 24
5
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
Note
1. The marking band indicates the cathode.
SOD80C
100H01
97-06-20
Hermetically sealed glass surface mounted package; 2 connectors
SOD80C
UNIT
D
mm
1.60
1.45
3.7
3.3
0.3
H
L
DIMENSIONS (mm are the original dimensions)
H
D
L
L
(1)
0
1
2 mm
scale
k
a
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAS81 | Schottky barrier diodes |
| BAS82 | Schottky barrier diodes |
| BAS81 | Schottky Barrier Diodes |
| BAS82 | Schottky Barrier Diodes |
| BAT120 | Schottky barrier double diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAS83-GS08 | 功能描述:肖特基二極管與整流器 60 Volt 30mA 500 mA IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| BAS83-GS18 | 功能描述:肖特基二極管與整流器 60 Volt 30mA 500 mA IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| BAS85 | 功能描述:肖特基二極管與整流器 Schottky diode 200mW RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| BAS85 /T3 | 功能描述:肖特基二極管與整流器 DIODE SCHTKY TAPE-11 RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| BAS85 L0G | 功能描述:DIODE SCHTKY 30V 200MA MINI MELF 制造商:taiwan semiconductor corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:30V 電流 - 平均整流（Io）:200mA 不同 If 時(shí)的電壓 - 正向（Vf:800mV @ 100mA 速度:小信號(hào) =< 200mA（Io），任意速度 反向恢復(fù)時(shí)間（trr）:5ns 不同?Vr 時(shí)的電流 - 反向漏電流:2μA @ 25V 不同?Vr，F(xiàn) 時(shí)的電容:10pF @ 1V，1MHz 安裝類型:表面貼裝 封裝/外殼:DO-213AC, MINI-MELF, SOD-80 供應(yīng)商器件封裝:迷你型 MELF 工作溫度 - 結(jié):125°C（最大） 標(biāo)準(zhǔn)包裝:10,000 |
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