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參數(shù)資料
| 型號： | BAT120SERIES |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Schottky barrier double diodes |
| 中文描述： | 雙肖特基勢壘二極管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | BAT120SERIES |
1998 Oct 30
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
= 300
μ
s;
δ
= 0.02.
THERMAL CHARACTERISTICS
Note
1.
Refer to SOT223 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
I
F
I
FSM
continuous reverse voltage
25
V
continuous forward current
non-repetitive peak forward current
1
A
t
p
<
10 ms; half sinewave;
JEDEC method
t
p
= 100
μ
s
10
A
I
RSM
T
stg
T
j
T
amb
non-repetitive peak reverse current
65
65
0.5
A
°
C
°
C
°
C
storage temperature
+150
junction temperature
125
operating ambient temperature
+125
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.5
I
F
= 100 mA
I
F
= 1 A
V
R
= 20 V; note 1; see Fig.6
V
R
= 25 V; note 1; see Fig.6
V
R
= 20 V; T
j
= 100
°
C; note 1
f = 1 MHz; V
R
= 4 V; see Fig.7
260
300
mV
400
450
mV
μ
A
mA
I
R
reverse current
80
100
500
1
10
mA
C
d
diode capacitance
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
相關PDF資料 |
PDF描述 |
|---|---|
| BAT140A | Schottky Barrier (Double) Diodes |
| BAT140C | Schottky Barrier (Double) Diodes |
| BAT140S | Schottky Barrier (Double) Diodes |
| BAT140 | 0.182 MEGO 0.5% 1/8 W |
| BAT254 | Schottky Barrier Diodes |
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