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參數(shù)資料
| 型號： | BAT86S-TR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCHOTTKY DIODE DO35-E2 - Tape and Reel |
| 中文描述： | Schottky (Diodes & Rectifiers) 200mA 60 Volt 5.0 Amp IFSM |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 72K |
| 代理商： | BAT86S-TR |
BAT86S
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 06-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85514
Small Signal Schottky Diode
MECHANICAL DATA
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
Integrated
discharge
Very low forward voltage
AEC-Q101 qualified
Material categorization:
For definitions of compliance please see
www.vishay.com/doc99912
protection
ring
against
static
APPLICATIONS
Applications where a very low forward voltage is required
PARTS TABLE
PART
BAT86S
ORDERING CODE
BAT86S-TR or BAT86S-TAP
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
BAT86S
REMARKS
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
PCB mounting, I = 4 mm;
V
RWM
= 25 V, T
amb
= 50 °C
SYMBOL
V
R
I
FSM
I
FRM
I
F
VALUE
50
5
500
200
UNIT
V
A
mA
mA
t
p
10 ms
t
p
1 s
Average forward current
I
FAV
200
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
I = 4 mm, T
L
= constant
SYMBOL
R
thJA
T
j
T
stg
VALUE
320
125
- 65 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
V
R
= 40 V
V
R
= 1 V, f = 1 MHz
SYMBOL
V
F
V
F
V
F
V
F
V
F
I
R
C
D
MIN.
TYP.
MAX.
300
380
450
600
900
5
8
UNIT
mV
mV
mV
mV
mV
μA
pF
Forward voltage
Reserve current
Diode capacitance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAT86S-TAP | SCHOTTKY DIODE DO35-E2 - Ammo Pack |
| BAT86S | Schottky Barrier Diode(反向電壓50V的肖特基勢壘二極管) |
| BAT86S | Schottky Barrier Diode |
| BAT86 | Schottky Diodes |
| BAT86 | SMALL SIGNAL SCHOTTKY DIODES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAT86T/R | 制造商:NXP Semiconductors 功能描述:Diode Schottky 50V 0.2A 2-Pin DO-34 T/R |
| BAT86-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Small Signal Schottky 50V 0.2A 2-Pin DO-35 T/R |
| BAT86-TR | 制造商:Vishay Semiconductors 功能描述:Diode, Small Signal; 200 mA (Continuous); 50 V (Min.); 0.900 V (Max.); 200 mW |
| BAT-900 | 制造商:Nidec-Shimpo America Corporation 功能描述:NIMH BATTERY, 7.2V, 2mAH; Battery Capacity:2.6Ah; Battery Voltage:7.2V; Battery Technology:Nickel Metal Hydride; For Use With:DT-900 Stroboscope; Voltage Rating:115V ;RoHS Compliant: NA |
| BAT93 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Schottky barrier diode |
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