- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373008 > BAV19 (GE Security, Inc.) Small Signal Diodes PDF資料下載
參數(shù)資料
| 型號： | BAV19 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Diodes |
| 中文描述： | 小信號二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 302K |
| 代理商： | BAV19 |
2. 70
3. 70
0
1
1
SOD-123
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate
Diode
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
Features
Characteristic
Symbol
BAV19W
BAV20W
BAV21W
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
120
200
250
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
150
200
V
RMS Reverse Voltage
V
R(RMS)
71
106
141
V
Forward Continuous Current (Note 1)
I
FM
400
mA
Average Rectified Output Current (Note 1)
I
O
200
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
I
FSM
2.5
0.5
A
Repetitive Peak Forward Surge Current
I
FRM
625
mA
Power Dissipation
P
d
250
mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
JA
500
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
2. Short duration pulse test used to minimize self-heating effect.
Characteristic
Symbol
Min
Max
Unit
Test Condition
Maximum Forward Voltage
(Note 2)
V
FM
1.0
1.25
V
I
F
= 100mA
I
F
= 200mA
Maximum Peak Reverse Current
@ Rated DC Blocking Voltage
(Note 2)
I
RM
100
15
nA
A
T
j
= 25°C
T
j
= 100°C
Junction Capacitance
C
j
5.0
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
50
ns
I
F
= I
R
= 30mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Marking:
BAV19W-BAV21W
SWITCHING DIODE
1 /2
Unit:mm
BAV19W A8
BAV20W T2
BAV21W T3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAV200...BAV203 | IC MCU 8K LS USB/PS-2 18-SOIC |
| BAV20 | FAST SWITCHING DIODE |
| BAV20 | Silicon Epitaxial Planar Diodes |
| BAV20 | Silicon-Planar-Diodes |
| BAV20W-T1 | SURFACE MOUNT FAST SWITCHING DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAV19 A0G | 功能描述:DIODE GEN PURP 100V 200MA DO35 制造商:taiwan semiconductor corporation 系列:- 包裝:帶盒（TB） 零件狀態(tài):在售 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:100V 電流 - 平均整流（Io）:200mA 不同 If 時的電壓 - 正向（Vf:1.25V @ 200mA 速度:小信號 =< 200mA（Io），任意速度 不同?Vr 時的電流 - 反向漏電流:100nA @ 100V 不同?Vr，F(xiàn) 時的電容:5pF @ 0V，1MHz 安裝類型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 工作溫度 - 結(jié):-55°C ~ 175°C 標(biāo)準(zhǔn)包裝:5,000 |
| BAV19 | 制造商:Fairchild Semiconductor Corporation 功能描述:Small Signal Diode |
| BAV19_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| BAV19_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Small Signal Diode |
| BAV19_11 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage Switching Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。