參數(shù)資料
型號: BAW56LT1
廠商: 樂山無線電股份有限公司
英文描述: Monolithic Dual Switching Diode Common Anode
中文描述: 單片雙開關(guān)二極管共陽極
文件頁數(shù): 1/4頁
文件大?。?/td> 97K
代理商: BAW56LT1
Semiconductor Group
1
Silicon Switching Diode Array
BAW 56
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Q62702-A688
Marking
Package
1)
Pin Configuration
BAW 56
A1s
SOT-23
Parameter
Reverse voltage
Peak reverse voltage
Symbol
Values
70
70
Unit
V
V
R
Forward current
Surge forward current,
t
= 1
μ
s
I
F
200
4.5
mA
A
Junction temperature
Storage temperature range
T
j
150
– 65 … + 150
C
Total power dissipation,
T
S
= 31 C
P
tot
330
mW
T
stg
V
RM
I
FS
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
500
K/W
R
th JS
360
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
G
For high-speed switching applications
G
Common anode
5.91
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BAW56LT1/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Monolithic Dual Common Anode Switching Diode
BAW56LT1D 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Switching Diode Common Anode
BAW56LT1G 功能描述:二極管 - 通用,功率,開關(guān) 70V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
BAW56LT1G 制造商:ON Semiconductor 功能描述:Small Signal Diode 制造商:ON Semiconductor 功能描述:SWITCHING DIODE, 70V, 200mA, SOT-23
BAW56LT3 功能描述:二極管 - 通用,功率,開關(guān) 70V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube