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參數(shù)資料
| 型號： | BB145C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low-voltage variable capacitance diode |
| 中文描述： | 10 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | PLASTIC, SC-79, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 60K |
| 代理商： | BB145C |
2001 Dec 11
2
Philips Semiconductors
Preliminary specification
Low-voltage variable capacitance diode
BB145C
FEATURES
Ultra small plastic SMD package
Very low capacitance spread
High capacitance ratio
C1 to C4 ratio: min. 2.39, max. 2.53.
APPLICATIONS
Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB145C is a variable capacitance diode, fabricated in
planar technology and encapsulated in the SOD523 ultra
small plastic SMD package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BB145C
K3
PIN
DESCRIPTION
1
2
cathode
anode
handbook, 2 columns
2
MBK441
Fig.1 Simplified outline (SOD523) and symbol.
Cathode side indicated by a bar.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
V
RM
I
F
T
stg
T
j
continuous reverse voltage
peak reverse voltage
continuous forward current
storage temperature
operating junction temperature
55
55
10
12
20
+150
+150
V
V
mA
°
C
°
C
in series with a 10 k
resistor
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
R
reverse current
V
R
= 15 V; see Fig.3
V
R
= 15 V; T
j
= 85
°
C
V
R
= 1 V; f = 470 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 4 V; f = 1 MHz
f = 1 MHz
6.4
2.55
2.39
3
30
0.6
7.2
2.85
2.53
nA
nA
pF
pF
r
s
C
d
diode series resistance
diode capacitance
capacitance ratio
C
C
d 4V
)
)
----------------
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