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參數(shù)資料
| 型號： | BBY62 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | UHF variable capacitance double diode |
| 中文描述： | UHF BAND, 16.5 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | PLASTIC, SOT-143B, SMD, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 25K |
| 代理商： | BBY62 |
1996 May 03
2
Philips Semiconductors
Product specification
UHF variable capacitance double diode
BBY62
FEATURES
Excellent linearity
Small plastic SMD package
C28:1.9 pF; ratio: 8.3.
APPLICATIONS
Electronic tuning in UHF television
tuners
VCO.
DESCRIPTION
The BBY62 is a variable capacitance
double diode, fabricated in planar
technology, and encapsulated in the
SOT143 small plastic SMD package.
The diodes are not electrically
connected to one another.
Fig.1 Simplified outline (SOT143), pin configuration and symbol.
handbook, halfpage
3
2
1
Top view
MAM172
2
3
4
1
Marking code:
S4.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Note
1.
V
R
is the value at which C
d
= 9 pF.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
55
55
30
V
continuous forward current
storage temperature
20
mA
°
C
°
C
+150
operating junction temperature
+125
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
16.5
8.3
MAX.
UNIT
I
R
reverse current
V
R
= 28 V; see Fig.3
V
R
= 28 V; T
j
= 85
°
C; see Fig.3
f = 470 MHz; note 1
V
R
= 1 V; f = 1 MHz; see Figs 2 and 4
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4 1.6
f = 1 MHz
10
200
1.2
2
nA
nA
pF
pF
r
s
C
d
diode series resistance
diode capacitance
capacitance ratio
C
C
d 28V
)
)
--------------------
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