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參數(shù)資料
| 型號： | BC550CT/R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 231K |
| 代理商： | BC550CT/R |
2004 Oct 11
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC549; BC550
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 30 V; IE = 0 A
15
nA
VCB = 30 V; IE = 0 A; Tj = 150 °C
5
μA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0 A
100
nA
hFE
DC current gain
IC = 10 μA
270
IC = 2 mA
420
520
800
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
90
250
mV
IC = 100 mA; IB = 5 mA
200
600
mV
VBEsat
base-emitter saturation voltage
700
mV
900
mV
VBE
base-emitter voltage
580
660
700
mV
770
mV
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
1.5
pF
Ce
emitter capacitance
VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
11
pF
fT
transition frequency
VCE = 5 V; IC = 10 mA;
f = 100 MHz
100
MHz
F
noise figure
VCE = 5 V; IC = 200 μA;
RS = 2 kΩ; f = 10 Hz to 15.7 kHz
4
dB
VCE = 5 V; IC = 200 μA;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
4
dB
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