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參數(shù)資料
| 型號(hào)： | BC817-16-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | BC817-16-13 |
DS11107 Rev. 11 - 2
1 of 3
BC817-16/-25/-40
www.diodes.com
Diodes Incorporated
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Maximum Ratings
@TA = 25°C unless otherwise specified
Notes:
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
Characteristic
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
800
mA
Peak Collector Current
ICM
1000
mA
Peak Emitter Current
IEM
1000
mA
Power Dissipation at TSB = 50°C (Note 1)
Pd
310
mW
Thermal Resistance, Junction to Substrate Backside (Note 1)
RqSB
320
°C/W
Thermal Resistance, Junction to Ambient Air (Note 1)
RqJA
403
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-65 to +150
°C
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary PNP Types Available (BC807)
Available in Lead Free/RoHS Compliant Version (Note 3)
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 3
Pin Connections: See Diagram
Marking (See Page 3): BC817-16 K6A
BC817-25 K6B
BC817-40 K6C
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Mechanical Data
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 2)
Symbol
Min
Max
Unit
Test Condition
DC Current Gain
Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
hFE
100
160
250
60
100
170
250
400
600
—
VCE = 1.0V, IC = 100mA
VCE = 1.0V, IC = 300mA
Collector-Emitter Saturation Voltage
VCE(SAT)
—
0.7
V
IC = 500mA, IB = 50mA
Base-Emitter Voltage
VBE
—
1.2
V
VCE = 1.0V, IC = 300mA
Collector-Emitter Cutoff Current
ICES
—
100
5.0
nA
A
VCE = 45V
VCE = 25V, Tj = 150°C
Emitter-Base Cutoff Current
IEBO
—
100
nA
VEB = 4.0V
Gain Bandwidth Product
fT
100
—
MHz
VCE = 5.0V, IC = 10mA,
f = 50MHz
Collector-Base Capacitance
CCBO
—12
pF
VCB = 10V, f = 1.0MHz
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
C
B
E
Features
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