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參數(shù)資料
| 型號： | BC847W |
| 廠商： | KEC Holdings |
| 英文描述： | High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-PDIP -55 to 125 |
| 中文描述： | 外延平面NPN晶體管（通用，開關(guān)） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 185K |
| 代理商： | BC847W |
1
) Tested with pulses t
p
= 300 s, duty cycle 2% – Gemessen mit Impulsen t
p
= 300 s, Schaltverhltnis 2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
01.11.2003
13
General Purpose Transistors
BC 846W ... BC 850W
Characteristics (T
j
= 25 C)
Kennwerte (T
j
= 25 C)
Typ.
Min.
Max.
Collector saturation volt. – Kollektor-Sttigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
Base saturation voltage – Basis-Sttigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 30 V
I
E
= 0, V
CB
= 30 V, T
j
= 150 C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 5 V
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazitt
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazitt
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Noise figure – Rauschzahl
V
CEsat
V
CEsat
–
–
90 mV
200 mV
250 mV
600 mV
V
BEsat
V
BEsat
–
–
700 mV
900 mV
–
–
V
BEon
V
BEon
580 mV
–
660 mV
–
700 mV
770 mV
I
CB0
I
CB0
–
–
–
–
15 nA
5 A
I
EB0
–
–
100 nA
f
T
100 MHz
–
C
CB0
–
3.5 pF
6 pF
C
EB0
–
9 pF
–
V
CE
= 5 V, I
C
= 200 A
R
G
= 2 k , f = 1 kHz,
f = 200 Hz
BC 846W...
BC 848W
BC 849W...
BC 850W
F
–
2 dB
10 dB
F
1.2 dB
4 dB
V
CE
= 5 V, I
C
= 200 A
R
G
= 2 k , f = 1 kHz,
f = 30 ... 15000 Hz
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
BC 849W
F
–
1.4 dB
4 dB
BC 850W
F
–
1.4 dB
4 dB
R
thA
620 K/W
2
)
BC 856W ... BC 860W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstrkungsgruppen pro Typ
BC 846AW = 1A
BC 847AW = 1E
BC 848AW = 1J
BC 846BW = 1B
BC 847BW = 1F
BC 848BW = 1K
BC 849BW = 2B
BC 850BW = 2F
BC 847CW = 1G
BC 848CW = 1L
BC 849CW = 2C
BC 850CW = 2G
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| BC848W | High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-PDIP -55 to 125 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC847W /T3 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847W,115 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847W,135 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847W_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:USM PACKAGE |
| bc847w115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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