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參數(shù)資料
| 型號(hào)： | BC849W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN general purpose transistor |
| 中文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 48K |
| 代理商： | BC849W |
1999 Apr 12
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849W; BC850W
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
2B
2C
TYPE
NUMBER
MARKING
CODE
(1)
2F
2G
BC849BW
BC849CW
BC850BW
BC850CW
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1
Simplified outline (SOT323) and symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BC849W
BC850W
collector-emitter voltage
BC849W
BC850W
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
30
50
V
V
V
CEO
open base
65
65
30
45
5
100
200
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
amb
≤
25
°
C; note 1
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