參數(shù)資料
型號(hào): BC850B
廠商: DIOTEC SEMICONDUCTOR AG
元件分類: 功率晶體管
英文描述: Surface mount Si-Epitaxial PlanarTransistors
中文描述: 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 46K
代理商: BC850B
1999 Apr 08
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849; BC850
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC859 and BC860.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
2B
2C
TYPE
NUMBER
MARKING
CODE
(1)
2F
2G
BC849B
BC849C
BC850B
BC850C
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BC849
BC850
collector-emitter voltage
BC849
BC850
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
30
50
V
V
V
CEO
open base
65
65
30
45
5
100
200
200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
amb
25
°
C; note 1
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參數(shù)描述
BC850B /T3 功能描述:兩極晶體管 - BJT TRANS LOW NOISE TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC850B _R1 _00001 制造商:PanJit Touch Screens 功能描述:
BC850B T/R 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 45V 0.1A 3-Pin TO-236AB T/R
BC850B,215 功能描述:兩極晶體管 - BJT TRANS LOW NOISE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC850B,235 功能描述:兩極晶體管 - BJT TRANS LOW NOISE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2