- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369427 > BC850C (DIOTEC SEMICONDUCTOR AG) Surface mount Si-Epitaxial PlanarTransistors PDF資料下載
參數(shù)資料
| 型號： | BC850C |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 功率晶體管 |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | BC850C |
1999 Apr 08
6
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849; BC850
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC850 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| BC850BLT1 | General Purpose Transistors(NPN Silicon) |
| BC850CLT1 | High Speed CMOS Logic Triple 3-Input NOR Gates 14-SOIC -55 to 125 |
| BC857A.B | CMOS Image Sensor |
| BC857BTT1 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | SOT-416 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC850C /T3 | 功能描述:兩極晶體管 - BJT TRANS LOW NOISE TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC850C _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BC850C T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 45V 0.1A 3-Pin TO-236AB T/R |
| BC850C,215 | 功能描述:兩極晶體管 - BJT NPN GP 45V 100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC850C,235 | 功能描述:兩極晶體管 - BJT TRANS LOW NOISE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。