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參數(shù)資料
| 型號： | BC857A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 170K |
| 代理商： | BC857A |
www.vishay.com
2
Document Number 85135
Rev. 1.2, 08-Sep-04
VISHAY
BC856 to BC859
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout on third page.
Maximum Thermal Resistance
1) Device on fiberglass substrate, see layout on third page.
Electrical DC Characteristics
Parameter
Test condition
Part
Symbol
Value
Unit
Collector - base voltage
BC856
- VCBO
80
V
BC857
- VCBO
50
V
BC858
- VCBO
30
V
BC859
- VCBO
30
V
Collector - emitter voltage
(base shorted)
BC856
- VCES
80
V
BC857
- VCES
50
V
BC858
- VCES
30
V
BC859
- VCES
30
V
Collector - emitter voltage
(base open)
BC856
- VCEO
65
V
BC857
- VCEO
45
V
BC858
- VCEO
30
V
BC859
- VCEO
30
V
Emitter - base voltage
- VEBO
5V
Collector current
- IC
100
mA
Peak colector current
- ICM
200
mA
Peak base current
- IBM
200
mA
Peak emitter current
IEM
200
mA
Power dissipation
Tamb = 25 °C
Ptot
3101)
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RθJA
3201)
°C/W
Thermal resistance junction to
substrate backside
RθSB
4501)
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 65 to + 150
°C
Parameter
Test condition
Part
Symbol
Min
Typ
Max
Unit
Small signal current gain
(current gain group A)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hfe
220
Small signal current gain
(current gain group B)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hfe
330
Small signal current gain
(current gain group C)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hfe
600
Input impedance (current gain
group A)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hie
1.6
2.7
4.5
k
Input impedance (current gain
group B)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hie
3.2
4.5
8.5
k
Input impedance (current gain
group C)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hie
68.7
15
k
Output admittance (current gain
group A)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hoe
18
30
S
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| BC857A RF | 制造商:SKMI/Taiwan 功能描述:Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R |
| BC857A RFG | 功能描述:TRANSISTOR, PNP, -45V, -0.1A, 12 制造商:taiwan semiconductor corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:45V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:650mV @ 5mA，100mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:125 @ 2mA，5V 功率 - 最大值:200mW 頻率 - 躍遷:100MHz 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:SOT-23 標(biāo)準(zhǔn)包裝:3,000 |
| BC857A T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC857A,215 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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