參數(shù)資料
型號: BC857T/R
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC, SST3, SMD, 3 PIN
文件頁數(shù): 4/10頁
文件大?。?/td> 158K
代理商: BC857T/R
2004 Jan 16
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1.
Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board, standard footprint.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC856
80
V
BC857
50
V
BC858
30
V
VCEO
collector-emitter voltage
open base
BC856
65
V
BC857
45
V
BC858
30
V
VEBO
emitter-base voltage
open collector
5
V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
Rth(j-a)
thermal resistance from junction to
ambient
in free air; note 1
500
K/W
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