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參數(shù)資料
| 型號： | BC879,112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 54K |
| 代理商： | BC879,112 |
2004 Nov 05
4
Philips Semiconductors
Product specication
NPN Darlington transistors
BC875; BC879
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICES
collector-emitter cut-off current
VBE =0 V
BC875
VCE =45V
50
nA
BC879
VCE =80V
50
nA
IEBO
emitter-base cut-off current
VEB =4V; IC =0 A
50
nA
hFE
DC current gain
IC = 150 mA
1000
IC = 0.5 A
2000
VCEsat
collector-emitter saturation voltage
IC = 0.5 A; IB = 0.5 mA
1.3
V
IC = 1 A; IB =1mA
1.8
V
VBEsat
base-emitter saturation voltage
IC = 1 A; IB =1mA
2.2
V
fT
transition frequency
VCE =5V; IC = 0.5 A; f = 100 MHz
200
MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = 0.5 mA
500
ns
toff
turn-off time
1300
ns
Fig.2 DC current gain; typical values.
VCE =10V.
handbook, full pagewidth
0
5000
1000
2000
3000
4000
MGD838
101
1
IC (mA)
hFE
10
102
103
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