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參數(shù)資料
| 型號： | BCR162F |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, TSFP-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 153K |
| 代理商： | BCR162F |
2007-07-23
2
BCR162...
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
BCR162
BCR162F
RthJS
≤ 240
≤ 90
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 A, IB = 0
V(BR)CEO
50
-
V
Collector-base breakdown voltage
IC = 10 A, IE = 0
V(BR)CBO
50
-
Collector-base cutoff current
VCB = 40 V, IE = 0
ICBO
-
100
nA
Emitter-base cutoff current
VEB = 10 V, IC = 0
IEBO
-
1.61 mA
DC current gain2)
IC = 5 mA, VCE = 5 V
hFE
20
-
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
VCEsat
-
0.3
V
Input off voltage
IC = 100 A, VCE = 5 V
Vi(off)
0.8
-
1.5
Input on voltage
IC = 2 mA, VCE = 0.3 V
Vi(on)
1
-
2.5
Input resistor
R1
3.2
4.7
6.2
k
Resistor ratio
R1/R2
0.9
1
1.1
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT
-
200
-
MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
3
-
pF
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300s; D < 2%
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