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參數(shù)資料
| 型號(hào)： | BCW68H |
| 廠(chǎng)商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | BCW68H |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
–45
Vdc
Collector–Base Voltage
–60
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current — Continuous
–800
mAdc
DEVICE MARKING
BCW68GLT1 = DH
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board (1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = –10
μ
Adc, VEB = 0)
Emitter–Base Breakdown Voltage (IE = –10
μ
Adc, IC = 0)
Collector Cutoff Current
(VCE= –45 Vdc, IE = 0)
(VCE= –45 Vdc, IB = 0, TA = 150
°
C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
–45
—
—
Vdc
–60
—
—
Vdc
–5.0
—
—
Vdc
—
—
—
—
–20
–10
nAdc
μ
Adc
Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0)
IEBO
—
—
–20
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW68GLT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCW68 | Surface mount Si-Epitaxial PlanarTransistors |
| BCW68F | Surface mount Si-Epitaxial PlanarTransistors |
| BCW68G | Surface mount Si-Epitaxial PlanarTransistors |
| BCW68 | EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) |
| BCW68GLT1 | General Purpose Transistors(PNP Silicon) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCW68H_11 | 制造商:MCC 制造商全稱(chēng):Micro Commercial Components 功能描述:PNP Small Signal Transistor 330mW |
| BCW68H-DH | 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
| BCW68HE6327 | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| BCW68HE6327HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 45V 0.8A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP AF 45V SOT-23 |
| BCW68HE6327T | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 45V 0.8A 3-Pin SOT-23 T/R |
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