參數(shù)資料
型號： BD231
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： PNP power transistor(PNP功率晶體管)
中文描述： 1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC, TO-126, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 44K
代理商： BD231
1999 Apr 21
2
Philips Semiconductors
Product specification
PNP power transistor
BD231
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
APPLICATIONS
Driver stages in television circuits.
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complement: BD230.
PINNING
PIN
DESCRIPTION
1
2
emitter
collector, connected to metal part of
mounting surface
base
3
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM272
1
2
3
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
80
5
1.5
3
1
12.5
+150
150
+150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
V
V
V
A
A
A
W
°
C
°
C
°
C
T
mb
≤
62
°
C
相關PDF資料
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相關代理商/技術參數(shù)
參數(shù)描述
BD232 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR NPN TO-126 制造商:MAGNATEC 功能描述:TRANSISTOR, NPN, TO-126 制造商:TT Electronics / Semelab 功能描述:TRANSISTOR, NPN, TO-126; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Power Dissipation Pd:20W; DC Collector Current:500mA; DC Current Gain hFE:25; Operating Temperature Min:-55C; Operating Temperature Max:150C;RoHS Compliant: Yes
BD232 制造商:UNBRANDED 功能描述:TRANSISTOR NPN TO-126
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BD2326_1 制造商:BEREX 制造商全稱:BEREX 功能描述:Triple Band 2‐Way SMT Power Divider
BD2326L50150A00 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Ultra Small Low Profile 0603 Balun 50ヘ to 150ヘ Balanced
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