參數(shù)資料
型號: BD678
廠商: 意法半導(dǎo)體
英文描述: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
中文描述: 互補性的芯片功率達林頓晶體管
文件頁數(shù): 2/6頁
文件大?。?/td> 87K
代理商: BD678
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CE
= rated V
CBO
V
CE
= rated V
CBO
T
C
= 100
o
C
0.2
2
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Sustaining Voltage
V
CE
= half rated V
CEO
0.5
mA
I
EBO
V
EB
= 5 V
2
mA
V
CEO(sus)
I
C
= 50 mA
for
BD677/677A/678/678A
for
BD679/679A/680/680A
for
BD681/682
60
80
100
V
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
for
BD677/678/679/680/681/682
I
C
= 1.5 A
I
B
= 30 mA
for
BD677A/678A/679A/680A
I
C
= 2 A
I
B
= 40 mA
for
BD677/678/679/680/681/682
I
C
= 1.5 A
V
CE
= 3 V
for
BD677A/678A/679A/680A
I
C
= 2 A
V
CE
= 3 V
2.5
2.8
V
V
V
BE
Base-Emitter Voltage
2.5
2.5
V
V
h
FE
DC Current Gain
for
BD677/678/679/680/681/682
I
C
= 1.5 A
V
CE
= 3 V
for
BD677A/678A/679A/680A
I
C
= 2 A
V
CE
= 3 V
750
750
h
fe
Small Signal Current
Gain
I
C
= 1.5 A
V
CE
= 3 V
f = 1MHz
1
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe OperatingAreas
DeratingCurve
BD677/677A/678/678A/679/679A/680/680A/681/682
2/6
相關(guān)PDF資料
PDF描述
BD681 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BD680 Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管)
BD680A Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管)
BD682 Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管)
BD707 COMPLEMENTARY SILICON POWER TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD678 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-126
BD678/A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:(75.32 k)
BD67891MUV-E2 制造商:ROHM Semiconductor 功能描述:IC MOTOR DRIVER BD67891MUV-E2
BD678A 功能描述:達林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BD678AG 功能描述:達林頓晶體管 4A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel