參數(shù)資料
型號： BD744C(PI)
英文描述： TRANSISTOR LEISTUNGS BIPOLAR
中文描述： 雙極晶體管LEISTUNGS
文件頁數(shù)： 2/6頁
文件大?。?/td> 133K
代理商： BD744C(PI)
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
I
B
= 0
(see Note 5)
BD744
BD744A
BD744B
BD744C
BD744
BD744A
BD744B
BD744C
BD744
BD744A
BD744B
BD744C
BD744/744A
BD744B/744C
-45
-60
-80
-100
V
I
CBO
Collector cut-off
current
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
V
CE
= -30 V
V
CE
= -60 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
-0.1
-0.1
-0.1
-0.1
-5
-5
-5
-5
-0.1
-0.1
mA
I
CEO
Collector cut-off
current
Emitter cut-off
current
mA
I
EBO
V
EB
= -5 V
I
C
= 0
-0.5
mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
V
CE
= -4 V
I
B
= -0.5 A
I
B
= -5 A
V
CE
= -4 V
V
CE
= -4 V
I
C
= -1 A
I
C
= -5 A
I
C
= -15 A
I
C
= -5 A
I
C
= -15 A
I
C
= -5 A
I
C
= -15 A
(see Notes 5 and 6)
40
20
5
150
V
CE(sat)
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
(see Notes 5 and 6)
-1
-3
-1
-3
V
V
BE
(see Notes 5 and 6)
V
h
fe
V
CE
= -10 V
I
C
= -1 A
f = 1 kHz
25
|
h
fe
|
V
CE
= -10 V
I
C
= -1 A
f = 1 MHz
5
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
1.4
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
d
t
r
t
s
t
f
Delay time
Rise time
Storage time
Fall time
I
C
= -5 A
V
BE(off)
= 4.2 V
I
B(on)
= -0.5 A
R
L
= 6
I
B(off)
= 0.5 A
t
p
= 20 μs, dc
≤
2%
20
120
600
300
ns
ns
ns
ns
相關PDF資料
PDF描述
BD744 PNP SILICON POWER TRANSISTORS
BD744A PNP SILICON POWER TRANSISTORS
BD744B PNP SILICON POWER TRANSISTORS
BD744C PNP SILICON POWER TRANSISTORS
BD750 TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 20A I(C) | TO-3
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BD744-S 功能描述:兩極晶體管 - BJT 45V 15A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD745 功能描述:兩極晶體管 - BJT 115W NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD745A 功能描述:兩極晶體管 - BJT 115W NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD745A-S 功能描述:兩極晶體管 - BJT 80V 20A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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