參數(shù)資料
型號(hào)： BDS19SMD
廠(chǎng)商： SEMELAB LTD
元件分類(lèi)： 功率晶體管
英文描述： SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
中文描述： 8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-276AB
封裝： HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 11K
代理商： BDS19SMD
2
1
3
2.41 (0.095)
(0.030)
min.
0.127 (0.005)
(0.296)
0
(
m
3.175 (0.125)
Max.
0.50 (0.020)
max.
0.76
2.41 (0.095)
0.127 (0.005)
(0.286)
7.26
16 PLCS
0.50(0.020)
0.127 (0.005)
BDS19SMD05
Bipolar PNP Device.
V
CEO
= 150V
I
C
= 15A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
150
V
I
C(CONT)
15
A
h
FE
@ 2/0.5 (V
CE
/ I
C
)
40
250
-
f
t
30M
Hz
P
D
50
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
15-Aug-02
Bipolar PNP Device in a
Hermetically sealed
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
PINOUTS
1 – Base
2 – Collector
3 – Emitter
SMD0.5 (TO276AA)
相關(guān)PDF資料
PDF描述
BDS19 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
BDW21A SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
BDW21B SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
BDW22B Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:130Vrms; Peak Surge Current (8/20uS), Itm:6000A; Clamping Voltage 8/20us Max :340V; Capacitance, Cd:1000pF; Package/Case:14mm Disc; Clamping Voltage Max, Vc:340V
BDW22C Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:150Vrms; Peak Surge Current (8/20uS), Itm:6000A; Clamping Voltage 8/20us Max :395V; Capacitance, Cd:800pF; Package/Case:14mm Disc; Clamping Voltage Max, Vc:395V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BDS19SMD05 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:PNP
BDS20 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON EPIBASE NPN DARLINGTON TRANSISTOR
BDS20_09 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON EPIBASE NPN DARLINGTON TRANSISTOR
BDS20SMD 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON EPIBASE NPN DARLINGTON TRANSISTOR
BDS21 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
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