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參數(shù)資料
| 型號： | BF1100WR |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF1100WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,; |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 100K |
| 代理商： | BF1100WR |
1995 Apr 25
7
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
Fig.10 Drain current as a function of gate 1 current;
typical values.
V
DS
= 9 to 12 V.
V
G2-S
= 4 V.
T
j
= 25
°
C.
handbook, halfpage
ID
(mA)
0
20
40
80
60
12
4
0
8
MLD163
IG1
μ
A)
Fig.11 Drain current as a function of gate 1 supply
voltage (= V
GG
) and drain supply voltage;
typical values; see Fig.26.
V
G2-S
= 4 V.
R
G1
connected to V
GG
.
T
j
= 25
°
C.
handbook, halfpage
ID
(mA)
0
15
10
5
0
4
8
16
MLD164
12
VGG
DS
RG1
147 k
180 k
205 k
249 k
301 k
402 k
511 k
Fig.12 Drain current as a function of gate 1 voltage
(= V
GG
); typical values; see Fig.26.
V
DS
= 9 V; V
G2-S
= 4 V.
R
G1
= 180 k
(
connected to V
GG
); T
j
= 25
°
C.
handbook, halfpage
0
2
4
10
8
6
4
0
8
MLD165
VGG
ID
(mA)
V
DS
= 12 V; V
G2-S
= 4 V.
R
G1
= 250 k
(connected to V
GG
); T
j
= 25
°
C.
Fig.13 Drain current as a function of gate 1 voltage
(= V
GG
); typical values; see Fig.26.
handbook, halfpage
0
4
8
12
4
0
8
MLD166
VGG
ID
(mA)
相關PDF資料 |
PDF描述 |
|---|---|
| BF1100 | N-channel dual-gate MOSFET |
| BF1100 | N-channel dual-gate MOSFET |
| BF1100R | N-channel dual-gate MOSFET |
| BF1100R | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF1100WR,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1101 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1101,215 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1101R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1101R,215 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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