參數(shù)資料
型號: BF1107
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: MOSFET N-channel switching transistor
封裝: BF1107<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BF1107<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁數(shù): 6/8頁
文件大?。?/td> 53K
代理商: BF1107
BF1107_4
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 9 January 2007
6 of 8
NXP Semiconductors
BF1107
N-channel single gate MOSFET
10. Abbreviations
11. Revision history
Table 9.
Acronym
MOSFET
RF
VCR
Abbreviations
Description
Metal-Oxide Semiconductor Field-Effect Transistor
Radio Frequency
Videocassette Recorder
Table 10.
Document ID
BF1107_4
Modifications:
Revision history
Release date
20070109
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Symbol notation has been adapted to comply with the current guidelines of NXP
Semiconductors.
Product type BF1107W has been removed from this data sheet.
19990514
Product data sheet
Data sheet status
Product data sheet
Change notice
-
Supersedes
BF1107_1107W_3
BF1107_1107W_3
(9397 750 05776)
BF1107_2
(9397 750 03969)
BF1107_N_1
(9397 750 03695)
-
BF1107_2
19980622
Product data sheet
-
BF1107_N_1
19980407
Preliminary data sheet
-
-
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1107,215 功能描述:射頻MOSFET小信號晶體管 N-Channel 3V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1107,235 功能描述:射頻MOSFET小信號晶體管 N-Channel 3V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1107W 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel single gate MOS-FETs
BF1108 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon RF switches
BF1108,215 功能描述:射頻MOSFET小信號晶體管 Single N-CH 7V 10mA 4 LEADS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel