參數(shù)資料
型號： BF1109WR
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： N-channel dual-gate MOSFET
封裝： BF1109WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,;
文件頁數(shù)： 2/15頁
文件大?。?/td> 347K
代理商： BF1109WR
1997 Dec 08
2
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R;
BF1109WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
up to 1 GHz
Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
VHF and UHF applications with 9 V
supply voltage, such as television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1109,
BF1109R and BF1109WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
PIN
DESCRIPTION
1
2
3
4
source
drain
gate 2
gate 1
Fig.1
Simplified outline
(SOT143B).
BF1109 marking code:
NFp.
handbook, 2 columns
Top view
MSB014
1
2
3
Fig.2
Simplified outline
(SOT143R).
BF1109R marking code:
NBp.
handbook, 2 columns
Top view
MSB035
1
2
4
Fig.3
Simplified outline
(SOT343R).
BF1109WR marking code:
NB.
ok, halfpage
Top view
MSB842
2
1
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
30
2.2
25
1.5
MAX.
UNIT
V
DS
I
D
P
tot
y
fs
C
ig1-ss
C
rss
F
X
mod
T
j
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
11
30
200
2.7
40
2.5
150
V
mA
mW
mS
pF
fF
dB
dB
V
C
T
amb
80
C
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
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PDF描述
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BF1118 Silicon RF switches
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1109WR,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF-110BPA/KOEM 功能描述:FLASHLIGHT HEAVY DUTY W/2D CELLS RoHS:是 類別:工具 >> 閃光燈 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:筆形手電筒 燈類型:LED 燈輸出:- 特點:可變強度 電池大小:AA（需要 1 個） 長度:- 主體材料:-
BF1118,215 功能描述:RF 開關(guān) IC SILICON RF SWITCHES RoHS:否 制造商:M/A-COM Technology Solutions 開關(guān)數(shù)量:Single 開關(guān)配置:SPDT 介入損耗:0.6 dB 截止隔離（典型值）:43 dB 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN-16 封裝:Reel
BF1118R,215 功能描述:RF 開關(guān) IC SILICON RF SWITCHES RoHS:否 制造商:M/A-COM Technology Solutions 開關(guān)數(shù)量:Single 開關(guān)配置:SPDT 介入損耗:0.6 dB 截止隔離（典型值）:43 dB 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN-16 封裝:Reel
BF1118W,115 功能描述:RF 開關(guān) IC SILICON RF SWITCHES RoHS:否 制造商:M/A-COM Technology Solutions 開關(guān)數(shù)量:Single 開關(guān)配置:SPDT 介入損耗:0.6 dB 截止隔離（典型值）:43 dB 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN-16 封裝:Reel
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