參數(shù)資料
型號： BF1118W
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： Silicon RF switches
封裝： BF1118W<SOT343N (SOT343N)|<<http://www.nxp.com/packages/SOT343N.html<1<Always Pb-free,;
文件頁數(shù)： 4/13頁
文件大小： 134K
代理商： BF1118W
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 29 June 2010
4 of 13
NXP Semiconductors
BF1118(R); BF1118W(R)
Silicon RF switches
7. Static characteristics
8. Dynamic characteristics
[1]
I
F
= diode forward current.
C
i
is the series connection of C
GS
and C
GK
; C
o
is the series connection of C
GD
and C
GK
.
Guaranteed on AQL basis; inspection level S4, AQL 1.0.
[2]
[3]
Table 7.
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
FET
V
(BR)GSS
gate-source breakdown voltage
V
GS(p)
gate-source pinch-off voltage
I
DSX
drain cut-off current
I
GSS
gate leakage current
R
DSon
drain-source on-state resistance
Diode
V
F
forward voltage
I
R
reverse current
Static characteristics
Conditions
Min
Typ
Max
Unit
V
DS
= 0 V; I
GS
= 0.1 mA
V
DS
= 1 V; I
D
= 20
μ
A
V
GS
=
3.3 V; V
DS
=
1 V
V
GS
=
3.3 V; V
DS
= 0 V
V
GS
= 0 V; I
D
= 1 mA
7
-
-
-
-
-
2
-
-
15
-
2.44
16
100
23.3
V
V
μ
A
nA
Ω
I
F
= 10 mA
V
R
= 25 V
V
R
= 20 V; T
amb
= 75
°
C
-
-
-
-
-
-
1
50
1
V
nA
μ
A
Table 8.
Common cathode; T
amb
= 25
°
C.
Symbol
Parameter
FET and diode
L
ins(on)
on-state insertion loss
Dynamic characteristics
Conditions
Min
Typ
Max
Unit
V
SK
= V
DK
= 0 V; I
F
= 0 mA
R
S
= R
L
= 50
Ω
; f
≤
1 GHz
R
S
= R
L
= 50
Ω
; f = 1 GHz
R
S
= R
L
= 75
Ω
; f
≤
1 GHz
V
SK
= V
DK
= 3.3 V; I
F
= 1 mA
R
S
= R
L
= 50
Ω
; f
≤
1 GHz
R
S
= R
L
= 50
Ω
; f = 1 GHz
R
S
= R
L
= 75
Ω
; f
≤
1 GHz
V
KS
= 0 V; I
D
= 1 mA
f = 1 MHz
V
SK
= V
DK
= 3.3 V; I
F
= 1 mA
V
SK
= V
DK
= 0 V; I
F
= 0 mA
f = 1 MHz
V
SK
= V
DK
= 3.3 V; I
F
= 1 mA
V
SK
= V
DK
= 0 V; I
F
= 0 mA
[1]
-
-
-
-
1.5
-
2.5
-
2.5
dB
dB
dB
ISL
off
off-state isolation
30
-
30
-
-
35
-
15
-
-
-
23.3
dB
dB
dB
Ω
R
DSon
C
i
drain-source on-state resistance
input capacitance
[2]
-
-
1
0.65
-
0.9
pF
pF
C
o
output capacitance
[2]
-
-
1
0.65
-
0.9
pF
pF
Diode
C
d
r
D
diode capacitance
diode forward resistance
f = 1 MHz; V
R
= 0 V
I
F
= 2 mA; f = 100 MHz
-
1.1
-
-
0.9
pF
Ω
[3]
-
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