參數(shù)資料
型號(hào): BF1118WR
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: Silicon RF switches
封裝: BF1118WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<Always Pb-free,;
文件頁數(shù): 3/13頁
文件大?。?/td> 134K
代理商: BF1118WR
BF1118_1118R_1118W_1118WR
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 29 June 2010
3 of 13
NXP Semiconductors
BF1118(R); BF1118W(R)
Silicon RF switches
4. Marking
Table 4.
Type number
BF1118
BF1118R
BF1118W
BF1118WR
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
FET
V
DS
drain-source voltage
V
SD
source-drain voltage
V
DG
drain-gate voltage
V
SG
source-gate voltage
I
D
drain current
Diode
V
R
reverse voltage
I
F
forward current
FET and diode
T
stg
storage temperature
T
j
junction temperature
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
[1]
Soldering point of FET gate and diode anode lead.
Marking
Marking code
VC%
VD%
VB
VC
Limiting values
Conditions
Min
Max
Unit
-
-
-
-
-
3
3
7
7
10
V
V
V
V
mA
-
-
35
100
V
mA
65
-
+150
150
°
C
°
C
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
Unit
K/W
[1]
250
相關(guān)PDF資料
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