參數(shù)資料
型號： BF1201
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel dual-gate MOSFET
封裝： BF1201<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;
文件頁數(shù)： 7/15頁
文件大?。?/td> 405K
代理商： BF1201
2000 Mar 29
7
NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1201; BF1201R; BF1201WR
handbook, halfpage
0
2
4
6
0
20
40
MCD943
VG2-S (V)
IG1
(
μ
A)
4 V
3.5 V
3 V
4.5 V
VGG
=
5 V
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values.
V
DS
= 5 V; T
j
= 25
C.
R
G1
= 62 k
(connected to V
GG
); see Fig.21.
handbook, halfpage
reduction
(dB)
0
1
2
4
50
10
3VAGC (V)
20
30
40
MCD944
Fig.14 Typical gain reduction as a function of the
AGC voltage; see Fig.21.
V
= 5 V; V
GG
= 5 V; R
G1
= 62 k
;
f = 50 MHz; T
amb
= 25
C.
handbook, halfpage
Vunw
(dB
μ
V)
0
gain reduction (dB)
10
50
110
90
80
100
20
30
40
MCD945
Fig.15 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.21.
V
DS
= 5 V; V
= 5 V; R
G1
= 62 k
; f = 50 MHz;
f
unw
= 60 MHz; T
amb
= 25
C.
handbook, halfpage
(mA)
0
50
0
4
8
12
16
10
20
30
40
gain reduction (dB)
MCD946
Fig.16 Drain current as a function of gain
reduction; typical values; see Fig.21.
V
= 5 V; V
GG
= 5 V; R
G1
= 62 k
;
f = 50 MHz; T
amb
= 25
C.
相關(guān)PDF資料
PDF描述
BF1201R N-channel dual-gate MOSFET
BF1201WR N-channel dual-gate MOSFET
BF1201R N-channel dual-gate MOSFET
BF1201WR N-channel dual-gate MOSFET
BF1202 N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1201,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF120-10-A-1-N-D 制造商:Global Connector Technology (GCT) 功能描述:BOARD-BOARD CONN SOCKET 10WAY 2ROW 制造商:Global Connector Technology (GCT) 功能描述:BOARD-BOARD CONN, SOCKET, 10WAY, 2ROW 制造商:Global Connector Technology (GCT) 功能描述:BOARD-BOARD CONN, SOCKET, 10WAY, 2ROW; Series:-; Pitch Spacing:2mm; No. of Rows:2; No. of Contacts:10; Gender:Receptacle; Contact Termination:Surface Mount Vertical; Contact Plating:Gold; Contact Material:Phosphor Bronze ;RoHS Compliant: Yes
BF1201R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate PoLo MOS-FETs
BF1201R,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1201R215 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
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