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參數(shù)資料
| 型號： | BF1201R |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF1201R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,; |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 405K |
| 代理商： | BF1201R |
2000 Mar 29
6
NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1201; BF1201R; BF1201WR
handbook, halfpage
ID
(mA)
0
IG1 (
μ
A)
10
50
12
4
0
8
20
30
40
MCD939
Fig.9
Drain current as a function of gate 1 current;
typical values.
V
DS
= 5 V; V
G2-S
= 4 V.
T
j
= 25
C.
handbook, halfpage
(mA)
0
5
0
4
8
12
16
1
2
3
4
VGG (V)
MCD940
Fig.10 Drain current as a function of gate 1 supply
voltage (= V
GG
); typical values.
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
C.
R
G1
= 62 k
(connected to V
GG
); see Fig.21.
handbook, halfpage
(mA)
0
10
0
5
10
15
20
2
4
6
8
VGG
=
VDS (V)
MCD941
68 k
Ω
RG1
=
39 k
Ω
47 k
Ω
56 k
Ω
62 k
Ω
82 k
Ω
100 k
Ω
Fig.11 Drain current as a function of gate 1 (= V
GG
)
and drain supply voltage; typical values.
V
G2-S
= 4 V; T
j
= 25
C.
R
G1
connected to V
GG
; see Fig.21.
handbook, halfpage
(mA)
0
2
4
6
VG2-S (V)
0
16
12
8
4
MCD942
VGG
=
5 V
4.5 V
4 V
3.5 V
3 V
V
DS
= 5 V; T
j
= 25
C.
R
G1
= 62 k
(connected to V
GG
); see Fig.21.
Fig.12 Drain current as a function of gate 2
voltage; typical values.
相關PDF資料 |
PDF描述 |
|---|---|
| BF1201WR | N-channel dual-gate MOSFET |
| BF1201R | N-channel dual-gate MOSFET |
| BF1201WR | N-channel dual-gate MOSFET |
| BF1202 | N-channel dual-gate MOSFET |
| BF1202 | N-channel dual-gate MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF1201R,215 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1201R215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1201WR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate PoLo MOS-FETs |
| BF1201WR,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1201WR,135 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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