參數(shù)資料
型號(hào)： BF1202
廠商： NXP Semiconductors N.V.
元件分類(lèi)： MOSFETs
英文描述： N-channel dual-gate MOSFET
封裝： BF1202<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BF1202/L<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<Always
文件頁(yè)數(shù)： 2/15頁(yè)
文件大?。?/td> 177K
代理商： BF1202
2010 Sep 16
2
NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
VHF and UHF applications with
3 to 9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1202,
BF1202R and BF1202WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
Marking code legend:
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
PIN
DESCRIPTION
1
2
3
4
source
drain
gate 2
gate 1
handbook, 2 columns
Top view
MSB014
1
2
3
Fig.1
Simplified outline
(SOT143B).
BF1202 marking code:
LD*
handbook, 2 columns
Top view
MSB035
1
2
4
Fig.2
Simplified outline
(SOT143R).
BF1202R marking code:
LE*
lfpage
Top view
MSB842
2
1
4
3
Fig.3
Simplified outline
(SOT343R).
BF1202WR marking code:
LE*
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
y
fs
C
ig1-ss
C
rss
F
X
mod
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
25
100
30
1.7
15
1.1
105
10
30
200
40
2.2
30
1.8
V
mA
mW
mS
pF
fF
dB
dB
V
f = 1 MHz
f = 800 MHz
input level for k = 1% at
40 dB AGC
T
j
operating junction temperature
150
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
相關(guān)PDF資料
PDF描述
BF1202 N-channel dual-gate MOSFET
BF1202R N-channel dual-gate MOSFET
BF1202WR N-channel dual-gate MOSFET
BF1202R N-channel dual-gate MOSFET
BF1202WR N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1202,215 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1202.215 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel dual-gate PoLo MOS-FETs
BF1202/L,215 制造商:NXP Semiconductors 功能描述:- Tape and Reel
BF1202_10 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel dual-gate PoLo MOS-FETs
BF1202R 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel dual-gate PoLo MOS-FETs
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