- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378410 > BF1202WR (NXP Semiconductors N.V.) N-channel dual-gate MOSFET PDF資料下載
參數(shù)資料
| 型號： | BF1202WR |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF1202WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2003,;BF1202WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 177K |
| 代理商： | BF1202WR |
2010 Sep 16
4
NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
R
G1
connects G
1
to V
GG
= 5 V.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 12 mA; unless otherwise specified.
Note
1.
Measured in Fig.21 test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
1.5
1.5
1.0
1.2
16
UNIT
V
(BR)DSS
V
(BR)G1-SS
gate 1-source breakdown voltage
V
(BR)G2-SS
gate 2-source breakdown voltage
V
(F)S-G1
forward source-gate 1 voltage
V
(F)S-G2
forward source-gate 2 voltage
V
G1-S(th)
gate 1-source threshold voltage
V
G2-S(th)
gate 2-source threshold voltage
I
DSX
drain-source current
drain-source breakdown voltage
V
G1-S
= V
G2-S
= 0; I
D
= 10
A
V
G2-S
= V
DS
= 0; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 100
A
V
G1-S
= 5 V; V
DS
= 5 V; I
D
= 100
A
V
G2-S
= 4 V; V
DS
= 5 V; R
G1
= 120 k
;
note 1
V
G2-S
= V
DS
= 0; V
G1-S
= 5 V
V
G1-S
= V
DS
= 0; V
G2-S
= 4 V
10
6
6
0.5
0.5
0.3
0.3
8
V
V
V
V
V
V
V
mA
I
G1-SS
I
G2-SS
gate 1 cut-off current
gate 2 cut-off current
50
20
nA
nA
SYMBOL
y
fs
C
ig1-ss
C
ig2-ss
C
oss
C
rss
F
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
pulsed; T
j
= 25
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
25
30
1.7
1
0.85
15
9
0.9
1.1
34.5
40
2.2
30
11
1.5
1.8
mS
pF
pF
pF
fF
dB
dB
dB
dB
f = 10.7 MHz; G
S
= 20 mS; B
S
= 0
f = 400 MHz; Y
S
= Y
S opt
f = 800 MHz; Y
S
= Y
S opt
f = 200 MHz; G
S
= 2 mS; B
S
= B
S opt
;
G
L
= 0.5 mS; B
L
= B
L opt
f = 400 MHz; G
S
= 2 mS; B
S
= B
S opt
;
G
L
= 1 mS; B
L
= B
L opt
f = 800 MHz; G
S
= 3.3 mS; B
S
= B
S opt
;
G
L
= 1 mS; B
L
= B
L opt
input level for k = 1%; f
w
= 50 MHz;
f
unw
= 60 MHz; note 1
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
G
tr
power gain
30.5
dB
26.5
dB
X
mod
cross-modulation
90
100
92
105
dB
V
dB
V
dB
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF1203 | Dual N-channel dual-gate MOSFET |
| BF1203 | Dual N-channel dual-gate MOSFET |
| BF1204 | Dual N-channel dual-gate MOSFET |
| BF1204 | Dual N-channel dual-gate MOSFET |
| BF1205C | Dual N-channel dual-gate MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1202WR,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1202WR,135 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1202WR/L,135 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
| BF1202WR135 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1203 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。