參數(shù)資料
型號(hào): BF545B
廠商: NXP Semiconductors N.V.
元件分類: JFETs
英文描述: N-channel FET
封裝: BF545B<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 6, 2005,;
文件頁(yè)數(shù): 3/16頁(yè)
文件大小: 122K
代理商: BF545B
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
3 of 16
NXP Semiconductors
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DS
drain-source voltage (DC)
V
GSO
gate-source voltage
V
GDO
gate-drain voltage (DC)
I
G
forward gate current (DC)
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
2
.
Limiting values
Conditions
Min
-
-
-
-
Max
30
30
30
10
250
+150
150
Unit
V
V
V
mA
mW
C
C
open drain
open source
T
amb
25
C
[1]
-
65
-
Fig 1.
Power derating curve.
T
amb
(
°
C)
0
200
150
50
100
mbb688
200
100
300
400
P
tot
(mW)
0
Thermal characteristics
Parameter
thermal resistance from junction to
ambient
Conditions
Typ
Unit
K/W
[1]
500
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