參數(shù)資料
型號(hào)： BF904AWR
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel dual-gate MOSFET
封裝： BF904AWR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2003,;
文件頁數(shù)： 4/15頁
文件大?。?/td> 302K
代理商： BF904AWR
NXP
Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
THERMAL CHARACTERISTICS
Note
1.
Soldering point of the source lead.
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
R
G1
connects gate 1 to V
GG
= 5 V; see Fig.21.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
°
C; V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
V
G2-S(th)
I
DSX
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
V
G2-S
= V
DS
= 0; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 20
μ
A
V
G1-S
= V
DS
= 5 V; I
D
= 20
μ
A
V
G2-S
= 4 V; V
DS
= 5 V;
R
G1
= 120 k
; note 1
V
G2-S
= V
DS
= 0; V
G1-S
= 5 V
V
G1-S
= V
DS
= 0; V
G2-S
= 5 V
6
6
0.5
0.5
0.3
0.3
8
15
15
1.5
1.5
1
1.2
13
V
V
V
V
V
V
mA
I
G1-SS
I
G2-SS
gate 1 cut-off current
gate 2 cut-off current
50
50
nA
nA
SYMBOL
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance
noise figure
pulsed; T
j
= 25
°
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
f = 800 MHz; G
S
= G
Sopt
; B
S
= B
Sopt
22
1
1
25
2.2
1.5
1.4
25
1
2
30
2.6
2
1.7
35
1.5
2.8
mS
pF
pF
pF
fF
dB
dB
Rev. 04 - 13 November 2007
4 of 15
相關(guān)PDF資料
PDF描述
BF904AR N-channel dual-gate MOSFET
BF904AWR N-channel dual-gate MOSFET
BF904WR N-channel dual-gate MOSFET
BF904WR N-channel dual-gate MOSFET
BF904 N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF904AWR T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF904AWR,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF904R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual gate MOS-FETs
BF904R T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF904R,215 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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