參數(shù)資料
型號(hào): BF908
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: N-channel dual-gate MOSFET
封裝: BF908<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 258K
代理商: BF908
NXP
Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
Table 1
Scattering parameters
Table 2
Noise data
f
(MHz)
s
11
s
21
s
12
s
22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
V
DS
= 8 V; V
G2-S
= 4 V; I
D
= 10 mA; T
amb
= 25
°
C.
50
0.998
0.994
0.979
0.962
0.939
0.914
0.892
0.865
0.837
0.811
0.785
5.1
10.4
20.8
30.3
40.1
49.1
57.1
64.4
71.6
78.1
84.5
3.537
3.502
3.450
3.318
3.234
3.093
2.912
2.774
2.616
2.479
3.329
173.5
167.7
154.9
143.7
131.9
120.7
111.1
101.0
91.4
81.9
72.5
0.001
0.001
0.003
0.004
0.005
0.006
0.005
0.005
0.004
0.004
0.003
98.2
88.8
74.6
69.5
65.6
64.4
63.1
65.2
70.8
87.4
108.0
0.996
0.994
0.987
0.983
0.980
0.974
0.969
0.966
0.965
0.965
0.966
2.4
4.9
9.5
13.9
18.5
22.8
27.0
31.2
35.4
39.4
43.7
100
200
300
400
500
600
700
800
900
1000
V
DS
= 8 V; V
G2-S
= 4 V; I
D
= 15 mA; T
amb
= 25
°
C.
50
0.998
0.994
0.976
0.957
0.934
0.907
0.885
0.851
0.826
0.797
0.773
5.3
10.9
21.6
31.7
41.7
51.1
59.1
66.8
73.9
80.7
87.0
3.983
3.943
3.878
3.722
3.614
3.446
3.240
3.072
2.891
2.733
2.569
173.4
167.5
154.7
143.3
131.6
120.4
110.9
100.9
91.3
81.9
72.8
0.001
0.001
0.003
0.004
0.005
0.006
0.005
0.005
0.004
0.004
0.004
95.5
93.6
74.3
70.0
63.5
62.2
59.6
64.8
67.8
85.0
102.9
0.994
0.991
0.984
0.979
0.975
0.969
0.964
0.961
0.959
0.958
0.958
2.4
5.0
9.7
14.2
18.8
23.2
27.4
31.6
35.9
40.0
44.2
100
200
300
400
500
600
700
800
900
1000
f
(MHz)
F
min
(dB)
Γ
opt
r
n
(ratio)
(deg)
V
DS
= 8 V; V
G2-S
= 4 V; I
D
= 10 mA; T
amb
= 25
°
C.
800
1.50
0.720
56.7
0.580
V
DS
= 8 V; V
G2-S
= 4 V; I
D
= 15 mA; T
amb
= 25
°
C.
800
1.50
0.700
59.2
0.520
Rev. 03 - 14 November 2007
6 of 9
相關(guān)PDF資料
PDF描述
BF908R N-channel dual-gate MOSFET
BF908R N-channel dual-gate MOSFET
BF909WR N-channel dual-gate MOSFET
BF909WR N-channel dual-gate MOSFET
BF909 N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF908,215 功能描述:射頻MOSFET小信號(hào)晶體管 DUAL GATE 10V 40mA VHF/UHF RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF908/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual-Gate MOS-FETs
BF908R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual-gate MOS-FETs
BF908R,215 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 12V 40mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF908R,235 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 12V 40mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel