參數(shù)資料
型號(hào): BF908R
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: N-channel dual-gate MOSFET
封裝: BF908R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF908R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47,
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 258K
代理商: BF908R
NXP
Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
Fig.4 Transfer characteristics; typical values.
V
DS
= 8 V; T
j
= 25
°
C.
handbook, halfpage
ID
(mA)
0.6
0.4
0
0.2
0.2
0.4
VG1-S (V)
3 V
2 V
1.5 V
1 V
0.5 V
0 V
0.6
30
10
0
20
MRC281
VG2-S = 4 V
Fig.5 Output characteristics; typical values.
V
G2-S
= 4 V; T
j
= 25
°
C.
handbook, halfpage
0
4
8
16
10
0
20
MRC282
12
VDS (V)
ID
(mA)
0.2 V
0.1 V
0 V
0.3 V
0.2 V
0.1 V
VG1-S = 0.3 V
Fig.6
Forward transfer admittance as a function
of drain current; typical values.
V
DS
= 8 V; T
j
= 25
°
C.
0
10
20
30
40
50
0
5
10
15
20
25
0.5 V
1 V
1.5 V
2 V
3 V
4 V
VG2-S= 0 V
Yfs
(mS)
ID(mA)
MRC280
Fig.7
Forward transfer admittance as a function
of junction temperature; typical values.
0
20
40
60
0
40
80
120
160
40
Yfs
(mS)
Tj( C)
MRC276
V
DS
= 8 V; V
G2-S
= 4 V; I
D
= 15 mA.
Rev. 03 - 14 November 2007
5 of 9
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BF908R,235 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 12V 40mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF908T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | SOT-143
BF908WR 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FET
BF908WR,115 功能描述:射頻MOSFET小信號(hào)晶體管 N-CH DUAL GATE 12V VHF/UHF RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel