參數(shù)資料
型號(hào)： BF909R
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel dual-gate MOSFET
封裝： BF909R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF909R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47,
文件頁(yè)數(shù)： 4/12頁(yè)
文件大?。?/td> 320K
代理商： BF909R
NXP
Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on a printed-circuit board.
T
s
is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Note
1.
R
G1
connects gate 1 to V
GG
= 5 V; see Fig.18.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
°
C; V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
BF909
BF909R
thermal resistance from junction to soldering point
BF909
BF909R
note 1
500
550
K/W
K/W
R
th j-s
note 2
T
s
= 92
°
C
T
s
= 78
°
C
290
360
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
V
G2-S
= V
DS
= 0; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 5 V;
I
D
= 20
μ
A
V
G1-S
= V
DS
= 5 V; I
D
= 20
μ
A
V
G2-S
= 4 V; V
DS
= 5 V;
R
G1
= 120 k
; note 1
V
G1-S
= 5 V; V
G2-S
= V
DS
= 0
V
G2-S
= 5 V; V
G1-S
= V
DS
= 0
6
6
0.5
0.5
0.3
15
15
1.5
1.5
1
V
V
V
V
V
V
G2-S(th)
I
DSX
gate 2-source threshold voltage
drain-source current
0.3
12
1.2
20
V
mA
I
G1-SS
I
G2-SS
gate 1 cut-off current
gate 2 cut-off current
50
50
nA
nA
SYMBOL
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance
noise figure
pulsed; T
j
= 25
°
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 800 MHz; G
S
= G
Sopt
; B
S
= B
Sopt
36
43
3.6
2.3
2.3
35
2
50
4.3
3
3
50
2.8
mS
pF
pF
pF
fF
dB
Rev. 02 - 19 November 2007
4 of 12
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