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參數(shù)資料
| 型號： | BF909WR |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF909WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,;BF909WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 180K |
| 代理商： | BF909WR |
2010 Sep 15
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF909WR
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on a printed-circuit board.
T
s
is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
Note
1.
R
G1
connects gate 1 to V
GG
= 5 V.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
C; V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
T
s
= 91
C; note 2
350
210
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
V
G2-S(th)
I
DSX
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
V
G2-S
= V
DS
= 0; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 20
A
V
G1-S
= V
DS
= 5 V; I
D
= 20
A
V
G2-S
= 4 V; V
DS
= 5 V; R
G1
= 120 k
;
note 1
V
G2-S
= V
DS
= 0; V
G1-S
= 5 V
V
G1-S
= V
DS
= 0; V
G2-S
= 5 V
6
6
0.5
0.5
0.3
0.3
12
15
15
1.5
1.5
1
1.2
20
V
V
V
V
V
V
mA
I
G1-SS
I
G2-SS
gate 1 cut-off current
gate 2 cut-off current
50
50
nA
nA
SYMBOL
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance
noise figure
pulsed; T
j
= 25
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 800 MHz; G
S
= G
Sopt
; B
S
= B
Sopt
36
43
3.6
2.3
2.3
30
2
50
4.3
3
3
50
2.8
mS
pF
pF
pF
fF
dB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF909WR T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF909WR,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF909WR,135 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 40mA 280mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF909WR115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF926 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTOR |
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