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參數(shù)資料
| 型號： | BF992 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF992<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BF992/A2<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<Always P |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 243K |
| 代理商： | BF992 |
NXP
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a ceramic substrate, 8 mm
×
10 mm
×
0.7 mm.
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
°
C; V
DS
= 10 V; V
G2-S
= 4 V; I
D
= 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
note 1
460
K/W
SYMBOL
±
V
(BR)G1-SS
±
V
(BR)G2-SS
V
(P)G1-S
V
(P)G2-S
±
I
G1-SS
±
I
G2-SS
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
gate 1 cut-off current
gate 2 cut-off current
V
G2-S
= V
DS
= 0; I
G1-SS
=
±
10 mA
V
G1-S
= V
DS
= 0; I
G2-SS
=
±
10 mA
V
G2-S
= 4 V; V
DS
= 10 V; I
D
= 20
μ
A
V
G1-S
= 0; V
DS
= 10 V; I
D
= 20
μ
A
V
G2-S
= V
DS
= 0; V
G1-S
=
±
7 V
V
G1-S
= V
DS
= 0; V
G2-S
=
±
7 V
8
8
0.2
0.2
20
20
1.3
1.1
25
25
V
V
V
V
nA
nA
SYMBOL
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
40
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
noise figure
20
25
4
1.7
2
30
1.2
mS
pF
pF
pF
fF
dB
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
S
= 2 mS
Rev. 04 - 21 November 2007
4 of 9
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| BF992 | N-channel dual-gate MOSFET |
| BF994S | N-channel dual-gate MOSFET |
| BF994S | N-channel dual-gate MOSFET |
| BF996S | N-channel dual-gate MOSFET |
| BF996S | N-channel dual-gate MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF992,215 | 功能描述:射頻MOSFET小信號晶體管 N-CH DUAL GATE 20V VHF RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF992/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon N-Channel Dual-Gate MOS-FETs |
| BF992T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 40MA I(D) | SOT-143 |
| BF993 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-143 |
| BF994 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FET |
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